Tech – Samsung 12-layer 3D TSV get stack on 12 DRAM chips in the same space as 8 – Reports

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Tech - Samsung 12-layer 3D TSV get stack on 12 DRAM chips in the same space as 8 - Reports
Tech - Samsung 12-layer 3D TSV get stack on 12 DRAM chips in the same space as 8 - Reports

Tech -Thanks to the laws of physics and Moore, there is only so much silicon we can fit in a single device.

The challenge has always been to cram as many components as possible without increasing the amount of space as much as possible.

In addition to improving manufacturing processes, one of the keys to that puzzle is thinking of creative ways to accomplish old techniques and designs. That is what Samsung is boasting off in its new DRAM technology that is able to stack 12 DRAM chips in the same space as 8 chips by ditching the traditional wire-bonding technique for TSV.

Silicon makers have gone three-dimensional because of space constraints.

Tech - Samsung 12-layer 3D TSV get stack on 12 DRAM chips in the same space as 8 - Reports
Tech – Samsung 12-layer 3D TSV get stack on 12 DRAM chips in the same space as 8 – Reports

When you can’t expand horizontally, you try to expand vertically. Stacking chips is often made possible using wire-bonding but those wires, thin as they are, still take up space between layers of chips.

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